SEMIX302GB12VS ? by semikron rev. 3 ? 13.01.2012 1 semix ? 2s gb SEMIX302GB12VS features ? homogeneous si ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? dynamic values apply to the following combination of resistors: r gon,main = 0,5 ? r goff,main = 0,5 ? r g,x = 2,2 ? r e,x = 0,5 ? absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 175 c t c =25c 448 a t c =80c 342 a i cnom 300 a i crm i crm = 3xi cnom 900 a v ges -20 ... 20 v t psc v cc = 720 v v ge 15 v v ces 1200 v t j =125c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 356 a t c =80c 266 a i fnom 300 a i frm i frm = 3xi fnom 900 a i fsm t p = 10 ms, sin 180, t j =25c 1620 a t j -40 ... 175 c module i t(rms) t terminal =80c 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =300a v ge =15v chiplevel t j =25c 1.75 2.2 v t j =150c 2.2 2.5 v v ce0 t j =25c 0.94 1.04 v t j =150c 0.88 0.98 v r ce v ge =15v t j =25c 2.7 3.9 m ? t j =150c 4.4 5.1 m ? v ge(th) v ge =v ce , i c = 12 ma 5.5 6 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 18.0 nf c oes f=1mhz 1.77 nf c res f=1mhz 1.77 nf q g v ge = - 8 v...+ 15 v 3300 nc r gint t j =25c 2.50 ? t d(on) v cc = 600 v i c =300a v ge =15v r g on =1.9 ? r g off =1.9 ? di/dt on = 5700 a/s di/dt off =3000a/s du/dt off = 6500 v/ s t j =150c 424 ns t r t j =150c 64 ns e on t j =150c 37.3 mj t d(off) t j =150c 619 ns t f t j =150c 90 ns e off t j =150c 36.1 mj r th(j-c) per igbt 0.1 k/w
SEMIX302GB12VS 2 rev. 3 ? 13.01.2012 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 300 a v ge =0v chip t j =25c 2.1 2.46 v t j =150c 2.1 2.4 v v f0 t j =25c 1.1 1.3 1.5 v t j =150c 0.7 0.9 1.1 v r f t j =25c 2.2 2.8 3.2 m ? t j =150c 3.5 3.9 4.3 m ? i rrm i f = 300 a di/dt off =5800a/s v ge =-15v v cc = 600 v t j =150c 318 a q rr t j =150c 54 c e rr t j =150c 21.8 mj r th(j-c) per diode 0.17 k/w module l ce 18 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c =125c 1m ? r th(c-s) per module 0.045 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 250 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 2s gb SEMIX302GB12VS features ? homogeneous si ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? dynamic values apply to the following combination of resistors: r gon,main = 0,5 ? r goff,main = 0,5 ? r g,x = 2,2 ? r e,x = 0,5 ?
SEMIX302GB12VS ? by semikron rev. 3 ? 13.01.2012 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SEMIX302GB12VS 4 rev. 3 ? 13.01.2012 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SEMIX302GB12VS ? by semikron rev. 3 ? 13.01.2012 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semix 2s spring configuration
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